IRF7353D1TR【PDF 2/8 页】MOSFET N-CH 30V 6.5A 8-SOIC

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IRF7353D1

MOSFET Electrical Characteristics @ T J = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max. Units Conditions

?

39 R G = 6.0 ?

V (BR)DSS

R DS(on)

V GS(th)

g fs

I DSS

I GSS

Q g

Q gs

Q gd

t d(on)

t r

t d(off)

t f

C iss

C oss

C rss

Drain-to-Source Breakdown Voltage

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Transconductance

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

30

—

—

1.0

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

0.023

0.032

—

14

—

—

—

—

22

2.6

6.4

8.1

8.9

26

17

650

320

130

— V V GS = 0V, I D = 250μA

0.032 V GS = 10V, I D = 5.8A

0.046 V GS = 4.5V, I D = 4.7A

— V V DS = V GS , I D = 250μA

— S V DS = 24V, I D = 5.8A

1.0 V DS = 24V, V GS = 0V

μA

25 V DS = 24V, V GS = 0V, T J = 55°C

100 V GS = 20V

nA

-100 V GS = -20V

33 I D = 5.8A

3.9 nC V DS = 24V

9.6 V GS = 10V (see figure 8)

12 V DD = 15V

13 I D = 1.0A

ns

26 R D = 15 ?

— V GS = 0V

— pF V DS = 25V

— ? = 1.0MHz (see figure 7)

MOSFET Source-Drain Ratings and Characteristics

Parameter

Min.

Typ. Max. Units

Conditions

I S

I SM

Continuous Source Current (Body Diode)

Pulsed Source Current (Body Diode)

—

—

— 2.5 A

— 30

V SD

t rr

Q rr

Body Diode Forward Voltage

Reverse Recovery Time (Body Diode)

Reverse Recovery Charge

—

—

—

0.78 1.0 V

45 68 ns

58 87 nC

T J = 25°C, I S = 1.7A, V GS = 0V

T J = 25°C, I F = 1.7A

di/dt = 100A/μs ?

Schottky Diode Maximum Ratings

Parameter

Max. Units.

Conditions

I F(av)

I SM

Max. Average Forward Current

Max. peak one cycle Non-repetitive

Surge current

2.7

1.9

120

11

A

A

50% Duty Cycle. Rectangular Wave, T A = 25°C

See Fig. 14

T A = 70°C

5μs sine or 3μs Rect. pulse Following any rated

10ms sine or 6ms Rect. pulse load condition &

with V RRM applied

Schottky Diode Electrical Specifications

Parameter

Max. Units

Conditions

V FM

Max. Forward voltage drop

0.50

0.62

0.39

0.57

V

I F = 1.0A, T J = 25°C

I F = 2.0A, T J = 25°C

I F = 1.0A, T J = 125°C

I F = 2.0A, T J = 125°C .

I RM

Max. Reverse Leakage current

0.06

16

mA

V R = 30V T J = 25°C

T J = 125°C

C t

dv/dt

2

Max. Junction Capacitance

Max. Voltage Rate of Charge

92 pF

3600 V/ μs

V R = 5Vdc ( 100kHz to 1 MHz) 25°C

Rated V R

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